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HY5DS283222BF - 128M(4Mx32) GDDR SDRAM

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • The Hynix HY5DS283222BF(P) guarantee until 166MHz speed at DLL_off condition 1.8V VDD and VDDQ wide range max power supply supports All inputs and outputs are compatible with SSTL_2 interface 12mm x 12mm, 144ball FBGA with 0.8mm pin pitch Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS0 ~ DQS3) Data outputs.

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HY5DS283222BF(P) 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Feb. 2005 1 1HY5DS283222BF(P) Revision History No. 0.1 0.2 1.0 Defined Target Spec. 1) Changed IDD & VDD_max 2) Changed tRCDWR, tWR, CL, tCK_max at 350Mhz speed bin Changed IDD Spec. Feb. 2005 History Draft Date Jun. 2004 Oct. 2004 Remark Rev. 1.0 / Feb. 2005 2 1HY5DS283222BF(P) DESCRIPTION The Hynix HY5DS283222 is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.