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HY5DS283222BF - 128M(4Mx32) GDDR SDRAM

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • The Hynix HY5DS283222BF(P) guarantee until 166MHz speed at DLL_off condition 1.8V VDD and VDDQ wide range max power supply supports All inputs and outputs are compatible with SSTL_2 interface 12mm x 12mm, 144ball FBGA with 0.8mm pin pitch Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS0 ~ DQS3) Data outputs.

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Other Datasheets by SK Hynix

Part Number Description
HY5DS573222F 256M(8Mx32) GDDR SDRAM
HY5DS573222FP 256M(8Mx32) GDDR SDRAM
HY5DU121622ALT 512Mb DDR SDRAM
HY5DU121622AT 512Mb DDR SDRAM
HY5DU121622B 512 Mb DDR SDRAM
HY5DU121622C 512 Mb DDR SDRAM
HY5DU121622CTP 512 Mb GDDR SDRAM
HY5DU121622DF 512Mb DDR SDRAM
HY5DU121622DFP 512Mb DDR SDRAM
HY5DU121622DLTP 512Mb DDR SDRAM

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HY5DS283222BF(P) 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Feb. 2005 1 1HY5DS283222BF(P) Revision History No. 0.1 0.2 1.0 Defined Target Spec. 1) Changed IDD & VDD_max 2) Changed tRCDWR, tWR, CL, tCK_max at 350Mhz speed bin Changed IDD Spec. Feb. 2005 History Draft Date Jun. 2004 Oct. 2004 Remark Rev. 1.0 / Feb. 2005 2 1HY5DS283222BF(P) DESCRIPTION The Hynix HY5DS283222 is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.