Datasheet Summary
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HY5DS573222F(P)
256M(8Mx32) GDDR SDRAM
HY5DS573222F(P)
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Feb. 2005 1
DataSheet 4 U .
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1HY5DS573222F(P)
Revision History
No. 0.1 0.2 0.3 0.4 0.5 1.0 Defined Target Spec. Supports Lead free parts for each speed grade CL, AC parameter, IDD5 change CL, tCK_max, tRAS, tDAL change & ment of DLL_off condition 1) Changed IDD & VDD_max 2) Changed tRCDWR, tWR, CL, tCK_max at 350Mhz speed bin Version 1.0 Release History Draft Date Mar....