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HY5DU121622C - 512 Mb DDR SDRAM

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • VDD, VDDQ = 2.5V ± 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V ± 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs o.

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More Datasheets from SK Hynix

Part Number Description
HY5DU121622CTP 512 Mb GDDR SDRAM
HY5DU121622ALT 512Mb DDR SDRAM
HY5DU121622AT 512Mb DDR SDRAM
HY5DU121622B 512 Mb DDR SDRAM
HY5DU121622DF 512Mb DDR SDRAM
HY5DU121622DFP 512Mb DDR SDRAM
HY5DU121622DLTP 512Mb DDR SDRAM
HY5DU121622DTP 512Mb DDR SDRAM
HY5DU12422ALT 512Mb DDR SDRAM
HY5DU12422AT 512Mb DDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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512Mb DDR SDRAM HY5DU12422C(L)TP HY5DU12822C(L)TP HY5DU121622C(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Mar. 2005 1 HY5DU12822C(L)TP HY5DU121622C(L)TP 1HY5DU12422C(L)TP Revision History Revision No. 1.0 First Version Release History Draft Date Mar. 2005 Remark Rev. 1.0 / Mar. 2005 2 HY5DU12822C(L)TP HY5DU121622C(L)TP 1HY5DU12422C(L)TP DESCRIPTION The HY5DU12422C(L)TP, HY5DU12822C(L)TP and HY5DU121622C(L)TP are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.