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HY5DU121622CTP - 512 Mb GDDR SDRAM

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • VDD, VDDQ = 2.5V +/- 0.1V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL ali.

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Full PDF Text Transcription for HY5DU121622CTP (Reference)

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HY5DU121622CTP 512Mb(32Mx16) GDDR SDRAM HY5DU121622CTP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3 / Apr. 2005 1 1HY5DU121622CTP Revision History Revision No. 0.1 0.2 0.3 History Initial Graphics Version Release Lead free Support & DC parameter change IDD Value change Draft Date Jan. 2005 Apr. 2005 Apr. 2005 Remark Rev. 0.3 / Apr. 2005 2 1HY5DU121622CTP Preliminary DESCRIPTION The HY5DU121622CTP is a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.