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HY5DU281622AT-6 Datasheet 128m(8mx16) Ddr Sdram

Manufacturer: SK Hynix

Overview: HY5DU281622AT-6 128M(8Mx16) DDR SDRAM HY5DU281622AT This document is a general.

General Description

and is subject to change without notice.

Hynix semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • VDD, VDDQ = 2.5V +/- 5% All inputs and outputs are compatible with SSTL_2 interface JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Dat.

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