Datasheet Details
| Part number | 2SA1145 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.80 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1145-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1145 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.80 KB |
| Description | PNP Transistor |
| Datasheet | 2SA1145-INCHANGE.pdf |
|
|
|
·Low collector output capacitance ·High frequency ·Complement to 2SC2705 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -50 mA 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1145 isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA;
IB= -1mA VBE(on) Base-Emitter Voltage IC= -10mA;VCE= -5V ICBO Collector Cutoff Current VCB= -150V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1145 | TRANSISTOR | Toshiba Semiconductor |
 |
2SA1145 | NPN Transistor | LGE |
| Part Number | Description |
|---|---|
| 2SA1116 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |
| 2SA1012-D | PNP Transistor |
| 2SA1013 | PNP Transistor |
| 2SA1046 | PNP Transistor |