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2SB1566 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) Wide Area of Safe Operation Complement to Type 2SD2395 Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Datasheet Details

Part number 2SB1566
Manufacturer INCHANGE
File Size 206.80 KB
Description PNP Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Operation ·Complement to Type 2SD2395 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -60 V -50 V -7 V -3 A -4.
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