Datasheet Details
| Part number | 2SB654 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.78 KB |
| Description | PNP Transistor |
| Datasheet | 2SB654-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors 2SB654.
| Part number | 2SB654 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.78 KB |
| Description | PNP Transistor |
| Datasheet | 2SB654-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 80W(Max)@TC=25℃ ·Complement to Type 2SD674 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA;
| Part Number | Description |
|---|---|
| 2SB653 | PNP Transistor |
| 2SB655 | PNP Transistor |
| 2SB656 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |