Datasheet Details
| Part number | 2SB796 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.66 KB |
| Description | PNP Transistor |
| Datasheet | 2SB796-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB796.
| Part number | 2SB796 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.66 KB |
| Description | PNP Transistor |
| Datasheet | 2SB796-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -200V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature Tstg Storage Temperature -10 A 20 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB796 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA;
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| 2SB707 | PNP Transistor |
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