Datasheet4U Logo Datasheet4U.com

2SB848 - PNP Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SB848

Datasheet Details

Part number 2SB848
Manufacturer INCHANGE
File Size 188.49 KB
Description PNP Transistor
Datasheet download datasheet 2SB848 Datasheet
Additional preview pages of the 2SB848 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Co

📁 Similar Datasheet

  • 2SB849 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB849A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB800 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB804 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB805 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB806 - PNP SILICON EPITAXIAL TRANSISTOR (NEC)
  • 2SB808 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SB810 - PNP SILICON TRANSISTOR (NEC)
Other Datasheets by INCHANGE
Published: |