Datasheet Details
| Part number | 2SB848 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.49 KB |
| Description | PNP Transistor |
| Datasheet | 2SB848-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB848.
| Part number | 2SB848 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.49 KB |
| Description | PNP Transistor |
| Datasheet | 2SB848-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB848 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;
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| 2SB824 | PNP Transistor |
| 2SB825 | PNP Transistor |
| 2SB826 | PNP Transistor |
| 2SB827 | PNP Transistor |