2SC2752
DESCRIPTION
- High breakdown voltage
- plementary to 2SA1156 PNP transistor
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE=150Ω
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @ Tc=25℃
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC2752 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS...
