Datasheet Details
| Part number | 2SC2757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.62 KB |
| Description | Silicon Power Transistor |
| Datasheet | 2SC2757_Inchange.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2757.
| Part number | 2SC2757 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.62 KB |
| Description | Silicon Power Transistor |
| Datasheet | 2SC2757_Inchange.pdf |
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·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2757 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ;
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