Inchange Semiconductor 2SC2757
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2757 |
|---|---|
| Datasheet | 2SC2757 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise●High Current-Gain Bandwidth Product
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2757ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.5 V 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 60 240 fT Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 800 1100 MHz COB Out...