2SC2757
DESCRIPTION
- Low Noise
- High Current-Gain Bandwidth Product
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in VHF RF amplifier, local oscillator, mixer.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
50 m A
℃
Tstg
Storage Temperature Range
-55~125
℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 10m A ; IB= 1m...
