2SC2757 - Silicon Power Transistor

Inchange Semiconductor

General Description

Low Noise High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in VHF RF amplifier, local oscillator, mixer.

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2SC2757 silicon power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC2757
Manufacturer	Inchange Semiconductor
File Size	183.62 KB
Description	Silicon Power Transistor
Datasheet	2SC2757 Datasheet

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2757 DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.