Inchange Semiconductor 2SC2759
Silicon NPN RF Transistor
| Part No. | 2SC2759 |
|---|---|
| Datasheet | 2SC2759 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise●High Conversion Gain Gcb= 12.5dB TYP. @IE= -5mA, VCB= 10V
APPLICATIONS
●Designed for use in VHF RF amplifier, local oscillator,mixer.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 30 V 14 V 3V 50 mA 0.15 W 125 ℃ -55~125 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2759ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 40 180 1.5 2.0 GHz COB Output Capacitance Gcb Conversion Gain IE= 0 ; VCB= 10V;f= 1.0MHz 1.0 1.3 pF IE= -5mA ; VCB= 10V; f= 900MHz; fOSC= 935MHz, 115 dBμV 10 12.5 dB hFE...