Datasheet Details
| Part number | 2SD1311 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1311-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1311.
| Part number | 2SD1311 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1311-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.6 A 1.3 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
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