Inchange Semiconductor 2SD1300
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1300 |
|---|---|
| Datasheet | 2SD1300 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.)●Low Collector Saturation Voltage●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1500 V 600 V 5 V 3.0 A 3.0 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A ICBO Collector Cutoff...