Datasheet Details
| Part number | 2SD1300 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.85 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1300-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300.
| Part number | 2SD1300 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.85 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1300-INCHANGE.pdf |
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·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1500 V 600 V 5 V 3.0 A 3.0 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1300 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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