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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
:hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V (Max) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
8
A
ICM
Collector Current-peak
12
A
IB
Base Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
0.8
A
40 W
1.
2SD1309 Datasheet
