Datasheet Details
| Part number | 2SD1309 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.03 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1309-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1309 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.03 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1309-INCHANGE.pdf |
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·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and low-speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current 8 A ICM Collector Current-peak 12 A IB Base Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 0.8 A 40 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1309 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
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| 2SD1301 | NPN Transistor |
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| 2SD1311 | NPN Transistor |
| 2SD1313 | NPN Transistor |
| 2SD133 | NPN Transistor |
| 2SD1344 | NPN Transistor |
| 2SD1348 | NPN Transistor |