Inchange Semiconductor 2SD1309
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1309 |
|---|---|
| Datasheet | 2SD1309 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain :hFE= 2000(Min) @ IC= 3A●Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min)
●Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio frequency amplifier and low-speed switching industrial use.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current 8 A ICM Collector Current-peak 12 A IB Base Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 0.8 A 40 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1309 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustainin...