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2SD1309 - Silicon NPN Darlington Power Transistor

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Part number 2SD1309
Manufacturer INCHANGE
File Size 216.03 KB
Description Silicon NPN Darlington Power Transistor
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High DC Current Gain :hFE= 2000(Min) @ IC= 3A Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and low-speed switching industrial use.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector

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