Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain
:hFE= 2000(Min) @ IC= 2A
- Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 100V (Min)
- Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V (Max) @ IC= 2A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency amplifier and low-speed switching industrial...
