Datasheet Details
| Part number | 2SD1307 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1307-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1307.
| Part number | 2SD1307 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1307-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 350V(Min) ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 350 V 350 V 5 V 6 A 15 A 35 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1307 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4 A;
IB= 400mA VBE(sat) Base-Emitter Saturation Voltage IC= 4 A;
| Part Number | Description |
|---|---|
| 2SD130 | NPN Transistor |
| 2SD1300 | NPN Transistor |
| 2SD1301 | NPN Transistor |
| 2SD1308 | NPN Transistor |
| 2SD1309 | Silicon NPN Darlington Power Transistor |
| 2SD1311 | NPN Transistor |
| 2SD1313 | NPN Transistor |
| 2SD133 | NPN Transistor |
| 2SD1344 | NPN Transistor |
| 2SD1348 | NPN Transistor |