Datasheet Details
| Part number | 2SD1301 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.85 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1301-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301.
| Part number | 2SD1301 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.85 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1301-INCHANGE.pdf |
|
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 1A ·Wide area of safe operation ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO IC Emitter-Base Voltage Collector Current- Continuous 5 V 2 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 8 A 45 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1301 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 500mA;
| Part Number | Description |
|---|---|
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