Datasheet Details
| Part number | 2SD130 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SD130-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130.
| Part number | 2SD130 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SD130-INCHANGE.pdf |
|
|
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·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1302 | Silicon NPN Transistor | Panasonic Semiconductor |
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