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2SD1393 - NPN Transistor

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Part number 2SD1393
Manufacturer INCHANGE
File Size 200.31 KB
Description NPN Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 0.8A Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VE

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