Inchange Semiconductor 2SD1575
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1575 |
|---|---|
| Datasheet | 2SD1575 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1200V (Min)●High Switching Speed
●High Reliability
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage 1200 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2 A ICP Collector Current-Peak 6 A IBP Base Current-Peak 2.5 A IBP Reverse Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1575 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1575ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 V VCE...