2SD1577 Description
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1577 TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IE= 1mA ; MAX UNI T 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;.