Inchange Semiconductor 2SD1577
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.2SD1577 Specifications
- Max Collector Current : 5A
- Terminals : 3
- Collector Emitter Voltage : 700V
- Max Power Dissipation : 3W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | 2SD1577 |
|---|---|
| Datasheet | 2SD1577 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1300V (Min)●High Switching Speed
●High Reliability
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for horizontal output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 17 A IBP Base Current-Peak 3.5 A IBP Reverse Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 3 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1577 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1577ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IE= 1mA ; IC= 0 MIN TYP.