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2SD1577 - NPN Transistor

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Description

High Breakdown Voltage- : VCBO= 1300V (Min) High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications ABSOLUTE MAXIMUM R

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Datasheet Details

Part number 2SD1577
Manufacturer INCHANGE
File Size 205.99 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak 17 A IBP Base Current-Peak 3.5 A IBP Reverse Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.
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