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2SD1575 - Silicon NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1200V (Min) High Switching Speed High Reliability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE

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Datasheet Details

Part number 2SD1575
Manufacturer Inchange Semiconductor
File Size 209.00 KB
Description Silicon NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCES Collector-Emitter Voltage 1200 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2 A ICP Collector Current-Peak 6 A IBP Base Current-Peak 2.5 A IBP Reverse Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
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