Download 2SD1572 Datasheet PDF
Inchange Semiconductor
2SD1572
DESCRIPTION - High DC Current Gain- : h FE = 1000(Min)@ IC= 4A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 4A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature W 2 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power...