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2SD157 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

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Datasheet Details

Part number 2SD157
Manufacturer INCHANGE
File Size 176.67 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=70℃ TJ Junction Temperature 100 mA 4 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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