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2SD1571 - NPN Transistor

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Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V (Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 0.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage swi

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Datasheet Details

Part number 2SD1571
Manufacturer INCHANGE
File Size 205.66 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.
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