Download 2SD1576 Datasheet PDF
Inchange Semiconductor
2SD1576
DESCRIPTION - High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) - High Switching Speed - Wide Area of Safe Operation - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector- Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ Junction Temperature 2.5...