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2SD1576 Datasheet

Power Transistor

Manufacturer: Inchange Semiconductor

2SD1576 Overview

·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1576 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN...

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