Datasheet Details
| Part number | 2SD1580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1580-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SD1580.
| Part number | 2SD1580 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.87 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1580-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1580 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
| Part Number | Description |
|---|---|
| 2SD1585 | NPN Transistor |
| 2SD1588 | NPN Transistor |
| 2SD1589 | NPN Transistor |
| 2SD1503 | NPN Transistor |
| 2SD1505 | NPN Transistor |
| 2SD1506 | NPN Transistor |
| 2SD1510 | NPN Transistor |
| 2SD1514 | NPN Transistor |
| 2SD1515 | NPN Transistor |
| 2SD1522 | NPN Transistor |