Datasheet Details
| Part number | 2SD1833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.80 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1833-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1833 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.80 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1833-INCHANGE.pdf |
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·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1833 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1833 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
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