Datasheet Details
| Part number | 2SD371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.46 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD371-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SD371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.46 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2SD371-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Power Dissipation- : PC= 50W(Max)@TC=25℃ ·Complement to Type 2SB531 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD371 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Part Number | Description |
|---|---|
| 2SD375 | NPN Transistor |
| 2SD310 | NPN Transistor |
| 2SD312 | NPN Transistor |
| 2SD313 | NPN Transistor |
| 2SD314 | NPN Transistor |
| 2SD315 | NPN Transistor |
| 2SD316 | NPN Transistor |
| 2SD317 | NPN Transistor |
| 2SD318 | NPN Transistor |
| 2SD320 | NPN Transistor |