Datasheet Details
| Part number | 2SD793 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SD793-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD793.
| Part number | 2SD793 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.90 KB |
| Description | NPN Transistor |
| Datasheet | 2SD793-INCHANGE.pdf |
|
|
|
·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 30V(Min.) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= 2.0V(Max.)@IC= 1.5A ·Excellent hFE linearity ·Complement to Type 2SB743 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD793 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A;
| Part Number | Description |
|---|---|
| 2SD792 | NPN Transistor |
| 2SD794 | NPN Transistor |
| 2SD795 | NPN Transistor |
| 2SD797 | NPN Transistor |
| 2SD798 | NPN Transistor |
| 2SD799 | NPN Transistor |
| 2SD705 | NPN Transistor |
| 2SD706 | NPN Transistor |
| 2SD711 | NPN Transistor |
| 2SD715 | NPN Transistor |