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2SD793 - NPN Transistor

General Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= 30V(Min.) Low Collector to Emitter Saturation Voltage : VCE(sat)= 2.0V(Max.)@IC= 1.5A Excellent hFE linearity Complement to Type 2SB743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD793 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 30V(Min.) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= 2.0V(Max.)@IC= 1.5A ·Excellent hFE linearity ·Complement to Type 2SB743 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.