Inchange Semiconductor BDX54B
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BDX54B |
|---|---|
| Datasheet | BDX54B Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(sus)= -80V(Min)●High DC Current Gain : hFE= 750(Min) @IC= -3A
●Low Collector Saturation Voltage : VCE(sat) = -2.0 V(Max) @ IC = -3.0 A
●Complement to Type BDX53B
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general-purpose amplifier and low-speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICP Collector Current-Peak -12 IB Base Current-Continuous -0.2 PC Collector Power Dissipation @ TC=25℃ 60 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.92 ℃/W BDX54B isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHA...