International Rectifier IRF7329
HEXFET Power MOSFET
| Part No. | IRF7329 |
|---|---|
| Datasheet | IRF7329 Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8ABSOLUTE MAXIMUM RATINGS
Parameter V DS ID @ TA = 25°C I D @ TA= 70°C I DM PD @TA = 25°C P D @TA = 70°C V GS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -9.2 -7.4 -37 2.0 1.3 16 ± 8.0 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RqJL RqJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. 20 62.5 Units °C/W...
