IRGPH20M - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPH20M

Datasheet Details

Part number	IRGPH20M
Manufacturer	IRF
File Size	240.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH20M Datasheet
Additional preview pages of the IRGPH20M datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 4.6V @VGE = 15V, I C = 4.5A n-channel.

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Published: Aug 23, 2005 |