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IRGPH20M - INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number IRGPH20M
Manufacturer IRF
File Size 240.36 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH20M Datasheet

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Overview

Previous Datasheet Index Next Data Sheet PD - 9.1137 IRGPH20M INSULATED GATE BIPOLAR.

Key Features

  • Short circuit rated - 10µs @ 125°C, V GE = 15V.
  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 4.6V @VGE = 15V, I C = 4.5A n-channel.

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