Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Features
- Short circuit rated - 10µs @ 125°C, V GE = 15V.
- Switching-loss rating includes all "tail" losses.
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Short Circuit Rated Fast IGBT
VCES = 1200V VCE(sat) ≤ 4.6V
@VGE = 15V, I C = 4.5A
n-channel.
IRGPH20M Datasheet
