IRGPH20S - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPH20S

Datasheet Details

Part number	IRGPH20S
Manufacturer	IRF
File Size	240.26 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH20S Datasheet
Additional preview pages of the IRGPH20S datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, IC = 6.6A n-channel.

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Published: Aug 23, 2005 |