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IRGPH20S - INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number IRGPH20S
Manufacturer IRF
File Size 240.26 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH20S Datasheet

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Overview

Previous Datasheet Index Next Data Sheet PD - 9.1138 IRGPH20S INSULATED GATE BIPOLAR.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, IC = 6.6A n-channel.

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