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IRGPH30S - INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number IRGPH30S
Manufacturer IRF
File Size 82.70 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH30S Datasheet

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Overview

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) ≤ 3.0V @VGE = 15V, IC = 13A n-channel.

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