IRGPH30S - INSULATED GATE BIPOLAR TRANSISTOR

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IRF

IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPH30S

Datasheet Details

Part number	IRGPH30S
Manufacturer	IRF
File Size	82.70 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH30S Datasheet
Additional preview pages of the IRGPH30S datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) ≤ 3.0V @VGE = 15V, IC = 13A n-channel.

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Published: Aug 23, 2005 |