IRGPH50F
Features
- Switching-loss rating includes all "tail" losses
- Optimized for medium operating frequency (1 to 10k Hz) See Fig. 1 for Current vs. Frequency curve
Fast Speed IGBT
VCES = 1200V VCE(sat) ≤ 2.9V
@VGE = 15V, I C = 25A n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and...
