IRGPH50F - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPH50F INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPH50F

Datasheet Details

Part number	IRGPH50F
Manufacturer	IRF
File Size	267.30 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH50F Datasheet
Additional preview pages of the IRGPH50F datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 2.9V @VGE = 15V, I C = 25A n-channel.

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Published: Aug 23, 2005 |