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IRGPH50F - INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number IRGPH50F
Manufacturer IRF
File Size 267.30 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH50F Datasheet

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Overview

Previous Datasheet Index Next Data Sheet PD - 9.761A IRGPH50F INSULATED GATE BIPOLAR.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 2.9V @VGE = 15V, I C = 25A n-channel.

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