Datasheet4U Logo Datasheet4U.com

IRGPH50S - INSULATED GATE BIPOLAR TRANSISTOR

📥 Download Datasheet

Datasheet Details

Part number IRGPH50S
Manufacturer IRF
File Size 96.85 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH50S Datasheet

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Overview

Previous Datasheet Index Next Data Sheet Preliminary Data SheetPD - 9.

Key Features

  • Switching-loss rating includes all "tail" losses.
  • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 33A n-channel.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
International Rectifier Logo IRGPH50U (IRGxxxx) Discrete IGBTs International Rectifier

More Datasheets from IRF

Part Number Description
IRGPH50F INSULATED GATE BIPOLAR TRANSISTOR
IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR
IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR
IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR
IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR
IRGPH40 INSULATED GATE BIPOLAR TRANSISTOR
IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR