• Part: IRGPH50MD2
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 1.32 MB
Download IRGPH50MD2 Datasheet PDF
IRF
IRGPH50MD2
Features - Short circuit rated -10µs @125°C, V GE = 15V - Switching-loss rating includes all "tail" losses TM - HEXFRED soft ultrafast diodes - Optimized for medium operating frequency ( 1 to 10k Hz) See Fig. 1 for Current vs. Frequency curve Short Circuit Rated Fast Co Pack IGBT VCES = 1200V VCE(sat) ≤ 2.9V @VGE = 15V, I C = 23A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ T STG Collector-to-Emitter Voltage Continuous Collector Current...