IRGPH50M - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPH50M

Datasheet Details

Part number	IRGPH50M
Manufacturer	IRF
File Size	255.49 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPH50M Datasheet
Additional preview pages of the IRGPH50M datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 1200V G E VCE(sat) ≤ 2.9V @VGE = 15V, I C = 23A n-channel.

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Published: Aug 23, 2005 |