• Part: IRGPH50FD2
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 431.65 KB
Download IRGPH50FD2 Datasheet PDF
IRF
IRGPH50FD2
Features - Switching-loss rating includes all "tail" losses TM - HEXFRED soft ultrafast diodes - Optimized for medium operating frequency (1 to 10k Hz) See Fig. 1 for Current vs. Frequency curve Fast Co Pack IGBT VCES = 1200V VCE(sat) ≤ 2.9V @VGE = 15V, IC = 25A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power...