IS46DR81280C Overview
Key Specifications
Package: TFBGA
Operating Voltage: 1.8 V
Max Voltage (typical range): 1.9 V
Min Voltage (typical range): 1.7 V
Description
MAY 2013 ISSI's 1Gb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.
Key Features
- Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-compatible)
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with CK
- 8 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported
- Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, 5 and 6 supported
- WRITE latency = READ latency
