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IS65WV12816ALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

bits.

technology.

Key Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation: 36 mW (typical) operating 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • 2CS Option Available.
  • Temperature Offerings: Option A: 0 to 70oC O.

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Full PDF Text Transcription for IS65WV12816ALL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65WV12816ALL. For precise diagrams, and layout, please refer to the original PDF.

IS65WV12816ALL IS65WV12816BLL ISSI® 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70ns...

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RY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • 2CS Option Available • Temperature Offerings: Option A: 0 to 70oC Option A1: –40 to +85oC Option A2: –40 to +105oC Option A3: –40 to +125oC • Lead-free available DESCRIPTION The ISSI IS65WV12816ALL/ IS65WV12816BLL are high- speed, 2M b

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