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IS65WV12816FBLL Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS65WV12816FBLL datasheet preview

Datasheet Details

Part number IS65WV12816FBLL
Datasheet IS65WV12816FBLL IS65WV12816FALL Datasheet (PDF)
File Size 591.04 KB
Manufacturer ISSI (now Infineon)
Description ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816FBLL page 2 IS65WV12816FBLL page 3

IS65WV12816FBLL Overview

The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

IS65WV12816FBLL Key Features

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
  • Operating Current: 26 mA (max) at 125°C
  • CMOS Standby Current: 3.0 uA (typ) at 25°C
  • TTL patible interface levels
  • Single power supply -1.65V-2.2V VDD (IS62/65WV12816FALL)
  • 2.2V-3.6V VDD (IS62/65WV12816FBLL)
  • Three state outputs
  • Data Control for upper and lower bytes
  • Industrial and Automotive temperature support
ISSI (now Infineon) logo - Manufacturer

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IS65WV12816FALL ULTRA LOW POWER CMOS STATIC RAM
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IS65WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV1288DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV1288DBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

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