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IS65WV12816FBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV12816FBLL datasheet PDF. This datasheet also covers the IS65WV12816FALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 26 mA (max) at 125°C.
  • CMOS Standby Current: 3.0 uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816FALL).
  • 2.2V-3.6V VDD (IS62/65WV12816FBLL).
  • Three state outputs.
  • Data Control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free avail.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS65WV12816FALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS65WV12816FBLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65WV12816FBLL. For precise diagrams, and layout, please refer to the original PDF.

IS62/65WV12816FALL IS62/65WV12816FBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power op...

View more extracted text
KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)  Three state outputs  Data Control for upper and lower bytes  Industrial and Automotive temperature support  2CS Option Available  Lead-free available DESCRIPTION The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.

More Datasheets from ISSI (now Infineon)

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