IS65WV12816FBLL
FEATURES
- High-speed access time: 45ns, 55ns
- CMOS low power operation
- Operating Current: 26 m A (max) at 125°C
- CMOS Standby Current: 3.0 u A (typ) at 25°C
- TTL patible interface levels
- Single power supply
- 1.65V-2.2V VDD (IS62/65WV12816FALL)
- 2.2V-3.6V VDD (IS62/65WV12816FBLL)
- Three state outputs
- Data Control for upper and lower bytes
- Industrial and Automotive temperature support
- 2CS Option Available
- Lead-free available
DESCRIPTION
The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input...
