Download the IS65WV12816DALL datasheet PDF.
This datasheet also covers the IS62WV12816DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.
General Description
bits.
CMOS technology.
Key Features
High-speed access time: 35ns, 45ns, 55ns.
CMOS low power operation.
36 mW (typical) operating.
9 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply.
1.8V ± 10% Vdd (IS62/65WV12816DALL).
2.5V--3.6V Vdd (IS62/65WV12816DBLL).
Fully static operation: no clock or refresh required.
Full PDF Text Transcription for IS65WV12816DALL (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IS65WV12816DALL. For precise diagrams, and layout, please refer to the original PDF.
IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low ...
View more extracted text
IC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vdd (IS62/65WV12816DALL) – 2.5V--3.6V Vdd (IS62/65WV12816DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Autotmovie temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.
IS65WV12816DALL Datasheet
