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IS65WV12816EBLL Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS65WV12816EBLL datasheet preview

Datasheet Details

Part number IS65WV12816EBLL
Datasheet IS65WV12816EBLL IS62WV12816EALL Datasheet (PDF)
File Size 1.05 MB
Manufacturer ISSI (now Infineon)
Description ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816EBLL page 2 IS65WV12816EBLL page 3

IS65WV12816EBLL Overview

The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

IS65WV12816EBLL Key Features

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
  • 36 mW (typical) operating
  • 9 µW (typical) CMOS standby
  • TTL patible interface levels
  • Single power supply -1.65V-2.2V VDD (IS62/65WV12816EALL)
  • 2.2V-3.6V VDD (IS62/65WV12816EBLL)
  • Three state outputs
  • Industrial and Automotive temperature support
  • 2CS Option Available
ISSI (now Infineon) logo - Manufacturer

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IS65WV12816EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816FALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816FBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV1288DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV1288DBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

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