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IS65WV12816BLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV12816BLL datasheet PDF. This datasheet also covers the IS65WV12816ALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation: 36 mW (typical) operating 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • 2CS Option Available.
  • Temperature Offerings: Option A: 0 to 70oC O.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS65WV12816ALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IS65WV12816BLL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65WV12816BLL. For precise diagrams, and layout, please refer to the original PDF.

IS65WV12816ALL IS65WV12816BLL ISSI® 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70ns...

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RY INFORMATION JUNE 2006 FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation: 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V to 2.2V VDD (65WV12816ALL) 2.5V to 3.6V VDD (65WV12816BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • 2CS Option Available • Temperature Offerings: Option A: 0 to 70oC Option A1: –40 to +85oC Option A2: –40 to +105oC Option A3: –40 to +125oC • Lead-free available DESCRIPTION The ISSI IS65WV12816ALL/ IS65WV12816BLL are high- speed, 2M b