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IS65WV12816FALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 26 mA (max) at 125°C.
  • CMOS Standby Current: 3.0 uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV12816FALL).
  • 2.2V-3.6V VDD (IS62/65WV12816FBLL).
  • Three state outputs.
  • Data Control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • 2CS Option Available.
  • Lead-free avail.

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IS62/65WV12816FALL IS62/65WV12816FBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JUNE 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power op...

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KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 26 mA (max) at 125°C – CMOS Standby Current: 3.0 uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816FALL) – 2.2V-3.6V VDD (IS62/65WV12816FBLL)  Three state outputs  Data Control for upper and lower bytes  Industrial and Automotive temperature support  2CS Option Available  Lead-free available DESCRIPTION The ISSI IS62/65WV12816FALL/BLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.