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IS66WVD4M16ALL

Manufacturer: ISSI (now Infineon)

IS66WVD4M16ALL datasheet by ISSI (now Infineon).

IS66WVD4M16ALL datasheet preview

IS66WVD4M16ALL Datasheet Details

Part number IS66WVD4M16ALL
Datasheet IS66WVD4M16ALL-ISSI.pdf
File Size 557.87 KB
Manufacturer ISSI (now Infineon)
Description 64Mb Async and Burst CellularRAM
IS66WVD4M16ALL page 2 IS66WVD4M16ALL page 3

IS66WVD4M16ALL Overview

CellularRAMâ„¢ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. This device is a variation of the industry-standard Fla.

IS66WVD4M16ALL Key Features

  • Single device supports asynchronous and burst operation
  • Mixed Mode supports asynchronous write and synchronous read operation
  • Dual voltage rails for optional performance
  • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
  • Multiplexed address and data bus
  • ADQ0~ADQ15
  • Asynchronous mode read access : 70ns
  • Burst mode for Read and Write operation
  • 4, 8, 16 or Continuous
  • Low Power Consumption
ISSI (now Infineon) logo - Manufacturer

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IS66WVD4M16ALL Distributor

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