Datasheet Details
| Part number | IS66WVD4M16ALL |
|---|---|
| Manufacturer | ISSI (now Infineon) |
| File Size | 557.87 KB |
| Description | 64Mb Async and Burst CellularRAM |
| Datasheet | IS66WVD4M16ALL-ISSI.pdf |
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Overview: IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
| Part number | IS66WVD4M16ALL |
|---|---|
| Manufacturer | ISSI (now Infineon) |
| File Size | 557.87 KB |
| Description | 64Mb Async and Burst CellularRAM |
| Datasheet | IS66WVD4M16ALL-ISSI.pdf |
|
|
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| Part Number | Description |
|---|---|
| IS66WVD1M16ALL | 16Mb Async and Burst CellularRAM |
| IS66WVD2M16ALL | 32Mb Async and Burst CellularRAM |
| IS66WVD2M16DALL | 32Mb Async and Burst CellularRAM |
| IS66WV1M16DALL | ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
| IS66WV1M16DBLL | ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
| IS66WV1M16EALL | ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
| IS66WV1M16EBLL | ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
| IS66WV51216ALL | ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
| IS66WV51216BLL | ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
| IS66WV51216EALL | ULTRA LOW POWER PSEUDO CMOS STATIC RAM |