IS66WVD4M16ALL - 64Mb Async and Burst CellularRAM

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ISSI

Datasheet Details

Part number	IS66WVD4M16ALL
Manufacturer	ISSI
File Size	557.87 KB
Description	64Mb Async and Burst CellularRAM
Datasheet	IS66WVD4M16ALL Datasheet
Additional preview pages of the IS66WVD4M16ALL datasheet.

IS66WVD4M16ALL Product details

Description

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

Features

Single device supports asynchronous and burst operation.
Mixed Mode supports asynchronous write and synchronous read operation.
Dual voltage rails for optional performance.
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
Multiplexed address and data bus.
ADQ0~ADQ15.
Asynchronous mode read access : 70ns.
Burst mode for Read and Write operation.
4, 8, 16 or Continuous.
Low Power Consumption.
Asynchronous Operation < 25 mA.
Burst operation < 35 mA (@10.

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Published: Jun 9, 2016 |